1 semiconductors summary bv ceo = 60v : r sat = 34m ; i c = 4.5a description packaged in the e-line outline this new low saturation 60v npn transistor offers extremely low on state losses making it ideal for use in dc-dc circuits and various driving and power management functions. features ? extemely low equivalent on-resistance; r sat = 34m at 5a ? 4.5 amps continuous current ? up to 15 amps peak current ? very low saturation voltages applications ? emergency lighting circuits ? motor driving (including dc fans) ? solenoid, relay and actuator drivers ? dc modules ? backlight inverters device marking zxt n20 10 zxtn2010a issue 1 - june 2005 60v npn low saturation medium power transistor in e-line device quantity zxtn2010astoa ZXTN2010ASTZ 2000 units / reel 2000 units / carton ordering information pinout e - l i n e
zxtn2010a semiconductors issue 1 - june 2005 2 parameter symbol v alue unit junction to ambient (a) r ja 125 c/w junction to ambient (b) r ja 175 c/w notes (a) for a device through hole mounted on 25mm x 25mm x 1.6mm fr4 pcb with high coverage of single sided 1oz copper, in still air conditions. collector lead length to solder point 4mm. (b for a device mounted in a socket in still air conditions. collector lead length 10mm. thermal resistance parameter symbol limit unit collector-base voltage bv cbo 150 v collector-emitter voltage bv ceo 60 v emitter-base voltage bv ebo 7v continuous collector current (a) i c 4.5 a peak pulse current i cm 15 a practical power dissipation (a) linear derating factor p d 1.0 8 w mw/c power dissipation at t a =25c (b) linear derating factor p d 0.71 5.7 w mw/c operating and storage temperature range t j ,t stg -55 to +150 c absolute maximum ratings
zxtn2010a semiconductors issue 1 - june 2005 3 characteristics
zxtn2010a semiconductors issue 1 - june 2005 4 parameter symbol min. typ. max. unit c onditions collector-base breakdown voltage bv cbo 150 190 v i c =100 a collector-emitter breakdown voltage bv cer 150 190 v i c =1 a, rb 1k collector-emitter breakdown voltage bv ceo 60 80 v i c =10ma* emitter-base breakdown voltage bv ebo 78.1 vi e =100 a collector cut-off current i cbo 20 0.5 na a v cb =120v v cb =120v, t amb =100 c collector cut-off current i cer r 1k 20 0.5 na a v cb =120v v cb =120v, t amb =100 c emitter cut-off current i ebo 10 na v eb =6v collector-emitter saturation voltage v ce(sat) 18 40 45 95 170 30 55 65 130 210 mv mv mv mv mv i c =100ma, i b =5ma* i c =1a, i b =100ma* i c =1a, i b =50ma* i c =2a, i b =50ma* i c =5a, i b =200ma* base-emitter saturation voltage v be(sat) 950 1050 mv i c =4a, i b =200ma* base-emitter turn-on voltage v be(on) 840 950 mv i c =4a, v ce =1v* static forward current transfer ratio h fe 100 100 55 20 200 200 105 40 300 i c =10ma, v ce =1v* i c =2a, v ce =1v* i c =5a, v ce =1v* i c =10a, v ce =1v* transition frequency f t 130 mhz i c =100ma, v ce =10v f=50mhz output capacitance c obo 31 pf v cb =10v, f=1mhz* switching times t on t off 42 760 ns ns i c =1a, v cc =10v, i b1 =i b2 =100ma electrical characteristics (at t amb = 25c unless otherwise stated) * measured under pulsed conditions. pulse width 300 s; duty cycle 2%.
zxtn2010a semiconductors issue 1 - june 2005 5 typical characteristics
zxtn2010a semiconductors 6 issue 1 - june 2005 europe zetex gmbh streitfeldstra?e 19 d-81673 mnchen germany telefon: (49) 89 45 49 49 0 fax: (49) 89 45 49 49 49 europe.sales@zetex.com americas zetex inc 700 veterans memorial hwy hauppauge, ny 11788 usa telephone: (1) 631 360 2222 fax: (1) 631 360 8222 usa.sales@zetex.com asia pacific zetex (asia) ltd 3701-04 metroplaza tower 1 hing fong road, kwai fong hong kong telephone: (852) 26100 611 fax: (852) 24250 494 asia.sales@zetex.com corporate headquarters zetex semiconductors plc zetex technology park chadderton, oldham, ol9 9ll united kingdom telephone (44) 161 622 4444 fax: (44) 161 622 4446 hq@zetex.com these offices are supported by agents and distributors in major countries world-wide. this publication is issued to provide outline information only which (unless agreed by the company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. the company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. for the latest product information, log on to www.zetex.com ? zetex semiconductors plc 2005 package outline controlling dimensions are in millimeters. approximate conversions are given in inches dim millimeters inches min max min max a 0.41 0.495 0.016 0.0195 b 0.41 0.495 0.016 0.0195 c 3.61 4.01 0.142 0.158 d 4.37 4.77 0.172 0.188 e 2.16 2.41 0.085 0.095 f ? 2.50 ? 0.098 g 1.27 nom 0.050 nom l 13.00 13.97 0.512 0.550 package dimensions
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